Share Email Print
cover

Proceedings Paper

Silicon p-i-n photodiode with low values of dark current
Author(s): A. A. Ascheulov; Vasily M. Godovanyuk; Yu. G. Dobrovolsky; Ilary M. Rarenko; V. V. Ryukhtin; Sergey E. Ostapov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

Dark current dependence of silicon p-i-n photodiode on the p+-type layer location depth at the photodiode crystal back. It was revealed that the smallest specific values of dark current is obtained at 6-9 micrometers p+- type layer depth. Three mechanisms that explain the obtained results were considered: dislocational, metal impurities and strain influence on the metal - semiconductor edge.

Paper Details

Date Published: 4 November 1999
PDF: 4 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368340
Show Author Affiliations
A. A. Ascheulov, Chernivtsi State Univ. (Ukraine)
Vasily M. Godovanyuk, Chernivtsi State Univ. (Ukraine)
Yu. G. Dobrovolsky, Chernivtsi State Univ. (Ukraine)
Ilary M. Rarenko, Chernivtsi State Univ. (Ukraine)
V. V. Ryukhtin, Chernivtsi State Univ. (Ukraine)
Sergey E. Ostapov, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

© SPIE. Terms of Use
Back to Top