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Proceedings Paper

Shottky diode based on the solid solutions CdxMnyHg1-x-yTe and CdxZnyHg1-x-yTe
Author(s): Oksana O. Bodnaruk; Andrey V. Markov; Sergey E. Ostapov; Ilary M. Rarenko; Vasily M. Godovanyuk
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Paper Abstract

The theoretical and experimental investigations of the main zone parameters of the quaternary solid solutions CdMnGeTe and CdZnHgTe are represented in the given paper. As a result of these investigations the empirical formulae for the energy gap width and intrinsic carrier concentration in the wide range of the temperature and compositions are proposed. The results of the theoretical calculations agree well with the experimental data. On the base of these empirical expressions the calculation of the Schottky diode main parameters have been carried out.

Paper Details

Date Published: 4 November 1999
PDF: 6 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368339
Show Author Affiliations
Oksana O. Bodnaruk, Chernivtsi State Univ. (Ukraine)
Andrey V. Markov, Chernivtsi State Univ. (Ukraine)
Sergey E. Ostapov, Chernivtsi State Univ. (Ukraine)
Ilary M. Rarenko, Chernivtsi State Univ. (Ukraine)
Vasily M. Godovanyuk, Chernivtsi State Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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