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Proceedings Paper

Properties and stability of parameters of highly compensated PbS-CdS, PbS-SnS, PbS-PbO, and PbTe-CdTe films
Author(s): Sergey P. Zimin
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Paper Abstract

The properties of highly compensated quasiuniform films of Pb1-xSnxS, Pb1-xCdxS, (PbS)1-x-(PbO)x, Pb1-xCdxTe solid solutions with a sodium acceptor impurity are described in this work. The films were grown by the method of molecular beam epitaxy on BaF2 substrates. It was shown that the films with different composition have the identical electric and photoelectric properties. Temperature dependences of Hall coefficient, dark resistivity and photoconductivity relaxation time have activation character. A high stability of electric and photoelectric parameters after thermal impact and after prolonged storage in the air was obtained.

Paper Details

Date Published: 4 November 1999
PDF: 5 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368336
Show Author Affiliations
Sergey P. Zimin, Yaroslavl State Univ. (Russia)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics

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