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Proceedings Paper

Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe
Author(s): O. G. Lanskaya; E. P. Lilenko; Aleksander V. Voitsekhovskii
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Paper Abstract

The composition of subsurface region MZT has been studied using Rutherford backscattering spectroscopy (RBS) ions helium. Interrelation of the electrical properties of MIS structures with the result of RBS have been determinated. It is found that the effective surface charge is connected with composition stoichiometry variation of subsurface region semiconductor.

Paper Details

Date Published: 4 November 1999
PDF: 7 pages
Proc. SPIE 3890, Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics, (4 November 1999); doi: 10.1117/12.368331
Show Author Affiliations
O. G. Lanskaya, Siberian Physical-Technical Institute (Russia)
E. P. Lilenko, Siberian Physical-Technical Institute (Russia)
Aleksander V. Voitsekhovskii, Siberian Physical-Technical Institute (Russia)


Published in SPIE Proceedings Vol. 3890:
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
Fiodor F. Sizov, Editor(s)

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