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Proceedings Paper

High-power 0.98-um broad-waveguide lasers using novel material system of InGaAs/InGaAsP/AlGaAs
Author(s): Guowen Yang; R. Jennifer Hwu; Jehn-Huar Howard Chern; ZunTu Xu; Junying Xu
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Paper Abstract

We describe the theoretical design and experimental fabrication of high power 0.98 micrometers strained quantum well lasers employing broad waveguide structure and novel hybrid material system of Al-free InGaAs/InGaAsP active region and AlGaAs cladding layers. The use of AlGaAs cladding, instead of InGaP, provides advantages in flexibility of laser structure design, simple epitaxial growth, improvement of surface morphology and laser performance. In addition to the theoretical study of the new structure, we successfully demonstrate the design by obtaining high performance laser devices. The as-grown InGaAs/InGaAsP/AlGaAs laser material exhibits very high quality with low threshold current density of 200 A/cm2, high internal quantum efficiency of approximately 93 percent, and low internal loss of 1.2 cm-1. For 100 micrometers -wide stripe lasers with cavity length of 800 micrometers , a high slope efficiency of 1.03 W/A, low vertical beam divergence of 36 degrees, high output power of 3.65 W, and very high characteristic temperature coefficient of 250 K are achieved.

Paper Details

Date Published: 5 October 1999
PDF: 9 pages
Proc. SPIE 3779, Current Developments in Optical Design and Optical Engineering VIII, (5 October 1999); doi: 10.1117/12.368192
Show Author Affiliations
Guowen Yang, Univ. of Utah (United States)
R. Jennifer Hwu, Univ. of Utah (United States)
Jehn-Huar Howard Chern, Univ. of Utah (United States)
ZunTu Xu, Institute of Semiconductors (China)
Junying Xu, Institute of Semiconductors (China)


Published in SPIE Proceedings Vol. 3779:
Current Developments in Optical Design and Optical Engineering VIII
Robert E. Fischer; Warren J. Smith, Editor(s)

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