Share Email Print
cover

Proceedings Paper

Noise characteristics of bootstrapped photovoltaic and photoconductive detectors
Author(s): Janos P. Makai; Jozef J. Makai; Janos Balazs
Format Member Price Non-Member Price
PDF $17.00 $21.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

If linearity of a semiconductor photodetector is a critical issue in an application like in radiometry, spectrophotometry, etc. the detectors are used in the so called current measurement mode. In this mode the detector is directly connected to a current-to-voltage converter, consequently in an ideal situation all the photogenerated charge carriers appear on the feedback resistor of the converter and produce a voltage drop. Photovoltaic detectors are short circuited by the converter, the built in electric field of the detector transfers the generated carriers to the converter. On the other hand photoconductive detectors should be biased externally by a constant voltage to produce an internal field for the transport of the charge carriers. Some applications need great area detectors, that especially in the IR wavelength region show low shunt resistance values. Ge, InAs, InSb, PbS, PbSe, HgCdTe, etc., have many decades lower shunt resistance values than that of a Si or InGaAs detector operating in the visible or near infrared region. If high sensitivity is needed than a high value of the feedback resistor is required that decreases the closed loop gain, consequently the settling accuracy. Bootstrapping of the detectors virtually increases the shunt resistance and so restores the decreased closed loop gain and settling accuracy. The bootstrapping technique will be shown and the noise characteristics will be analyzed and compared to the traditional solutions.

Paper Details

Date Published: 26 October 1999
PDF: 7 pages
Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); doi: 10.1117/12.366736
Show Author Affiliations
Janos P. Makai, Research Institute for Technical Physics and Material Science (Austria)
Jozef J. Makai, Siemens Telefongyar Ltd. (Hungary)
Janos Balazs, Research Institute for Technical Physics and Material Science (Hungary)


Published in SPIE Proceedings Vol. 3794:
Materials and Electronics for High-Speed and Infrared Detectors
Walter F. Kailey; Stephen M. Goodnick; Randolph E. Longshore; Walter F. Kailey; Randolph E. Longshore; YongHang Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top