Share Email Print
cover

Proceedings Paper

Characterization of optical properties of PtSi at 3.392 μm from 300 K to 85 K and the relation of morphological effects
Author(s): Shane O'Prey; Gerald F. Cairns; Paul Dawson
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

PtSi/Si Schottky junctions, fabricated using a conventional technique of Pt deposition with a subsequent thermal anneal, are examined using X-ray diffraction, atomic force microscopy and a novel prism/gap/sample optical coupling system. With the aid of X-ray diffraction and atomic force microscopy it is shown that a post-anneal etch in aqua regia is essential for the removal of an unreacted, rough surface layer of Pt, to leave a much smoother PtSi film. The prism/gap/sample or Otto coupling ring is mounted in a small UHV chamber and has facilities for remote variation of the gap (by virtue of a piezo-actuator system) and variation of the temperature in the range of approximately 300 K - 85 K. The system is used to excite surface plasmon polaritons on the outer surface of the PtSi and thus produce sensitive optical characterization as a function of temperature. This is performed in order to yield an understanding of the temperature dependence of phonon and interface scattering of carriers in the PtSi.

Paper Details

Date Published: 26 October 1999
PDF: 11 pages
Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); doi: 10.1117/12.366733
Show Author Affiliations
Shane O'Prey, Queen's Univ. of Belfast (United Kingdom)
Gerald F. Cairns, Queen's Univ. of Belfast (United Kingdom)
Paul Dawson, Queen's Univ. of Belfast (United Kingdom)


Published in SPIE Proceedings Vol. 3794:
Materials and Electronics for High-Speed and Infrared Detectors
Walter F. Kailey; Stephen M. Goodnick; Randolph E. Longshore; Walter F. Kailey; Randolph E. Longshore; YongHang Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top