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Proceedings Paper

Influence of interdiffusion on strained GaInSb/InAs material and its application on long-wavelength infrared photodectors
Author(s): Alex Siew-Wan Lee; E. Herbert Li
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Paper Abstract

Intermixing effect in type-II Ga0.6In0.4Sb/InAs superlattices is studied. The interdiffusion of both group- III and group V atoms across the heterointerface modifies the superlattices optical properties and electronic structures. The intermixed-induced strain has different effects on the band structure of the respective strained layers. Conduction band is undergone successive changes where the barrier height was initially increased in potential and subsequently became lower than the as-grown one for increasing extent of intermixing. Consequently the confinement profile is tuned from an abrupt interface to a graded shape. Intersubband transition is investigated in the intermixed superlattices where the absorption peak wavelength is red shifted continuously from the as grown 11.7 to the interdiffused 12.5 micrometers . Both the intermixed absorption and responsivity are reducing in magnitude. However, dark current is reduced at initial stage of intermixing as a result of the increase in confinement potential and the effective barrier width. Detectivity at 77 K is enhanced for the intermixed detector from 2.5 X 1011 to 3 X 1011 cm(root)Hz/W, which is comparable to the MCT detector.

Paper Details

Date Published: 26 October 1999
PDF: 8 pages
Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); doi: 10.1117/12.366730
Show Author Affiliations
Alex Siew-Wan Lee, Univ. of Hong Kong (Canada)
E. Herbert Li, Univ. of Hong Kong (United States)


Published in SPIE Proceedings Vol. 3794:
Materials and Electronics for High-Speed and Infrared Detectors
Walter F. Kailey; Stephen M. Goodnick; Randolph E. Longshore; Walter F. Kailey; Randolph E. Longshore; YongHang Zhang, Editor(s)

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