Share Email Print

Proceedings Paper

InAs/Ga1-xInxSb infrared superlattice diodes: correlation between surface morphology and electrical performance
Author(s): Frank Fuchs; L. Buerkle; Wilfried Pletschen; J. Schmitz; Martin Walther; H. Gullich; N. Herres; Sabine Mueller
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The structural properties of InAs/Ga1-xInxSb infrared (IR) superlattice layers grown by MBE on GaSb substrates have been investigated using high-resolution X- ray diffraction, atomic force microscopy (AFM), secondary ion mass spectroscopy and photoluminescence (PL) spectroscopy. Excellent layers could be grown with a residual mismatch below 1 X 10-3 showing interference oscillations in the X-ray diffraction pattern and high PL efficiency. IR-photodiodes processed from such layers show high responsivity and low leakage currents. The influence of n- and p-doping on the PL efficiency of IR superlattices has been investigated, showing a stronger decrease of the PL intensity for n-doping than for p-doping. Growing the IR-SLs with an As/In V/III ratio below 5, defects with a size of about 1 to 5 micrometers in diameter are observed in the AFM scans. The surface morphology between the defects remains perfect. The defects do not significantly affect the X-ray diffraction patterns and the PL intensity. In a minority-carrier-device, such as IR- photodiodes, the defects are associated with defect-assisted tunneling currents leading to a strong degradation of the electrical performance. By optimizing the growth conditions the defect density can be significantly reduced resulting in a surface roughness given by the standard deviation of the measured height profile of the AFM measurement below 0.3 nm leading to excellent device performance.

Paper Details

Date Published: 26 October 1999
PDF: 6 pages
Proc. SPIE 3794, Materials and Electronics for High-Speed and Infrared Detectors, (26 October 1999); doi: 10.1117/12.366728
Show Author Affiliations
Frank Fuchs, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
L. Buerkle, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Wilfried Pletschen, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
J. Schmitz, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Martin Walther, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
H. Gullich, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
N. Herres, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)
Sabine Mueller, Fraunhofer-Institut fuer Angewandte Festkoerperphysik (Germany)

Published in SPIE Proceedings Vol. 3794:
Materials and Electronics for High-Speed and Infrared Detectors
Walter F. Kailey; Stephen M. Goodnick; Randolph E. Longshore; Walter F. Kailey; Randolph E. Longshore; YongHang Zhang, Editor(s)

© SPIE. Terms of Use
Back to Top