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Proceedings Paper

Far-infrared reflection-absorption investigation of SnCl4 on silica and Na-modified silica surfaces using the buried metal layer approach
Author(s): Michael J. Pilling; - Nurhayati; Peter Gardner; Amir Awalludin; Martyn E. Pemble; Mark Surman
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Paper Abstract

One of the key reactions in the CVD growth of SnO2 on glass is that between SnCl4 and H2O. Exploiting the buried metal layer approach, we have used far-infrared RAIRS at the Daresbury synchrotron, to study the initial steps in this process on model glass surfaces, consisting of thin (approximately 500 - 1000 angstroms) SiO2 films and Na covered SiO2 films grown on a tungsten substrate.

Paper Details

Date Published: 25 October 1999
PDF: 9 pages
Proc. SPIE 3775, Accelerator-based Sources of Infrared and Spectroscopic Applications, (25 October 1999); doi: 10.1117/12.366645
Show Author Affiliations
Michael J. Pilling, Univ. of Manchester Institute of Science and Technology (United States)
- Nurhayati, Univ. of Manchester Institute of Science and Technology (United Kingdom)
Peter Gardner, Univ. of Manchester Institute of Science and Technology (United Kingdom)
Amir Awalludin, Univ. of Salford (United Kingdom)
Martyn E. Pemble, Univ. of Salford (United Kingdom)
Mark Surman, Daresbury Lab./CLRC (United Kingdom)


Published in SPIE Proceedings Vol. 3775:
Accelerator-based Sources of Infrared and Spectroscopic Applications
G. Lawrence Carr; Paul Dumas, Editor(s)

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