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Proceedings Paper

Au/CdZnTe/CdS m-i-n detectors fabricated by sputtering technique
Author(s): Stephen U. Egarievwe; Henry Chen; Kaushik Chattopadhyay; Jean-Olivier Ndap; Oludurotimi O. Adetunji; T. McMillan; Oghaghare K. Okobiah; Arnold Burger; Ralph B. James
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Paper Abstract

The electrical and detection properties of Au/CdZnTe/CdS (m- i-n) gamma-ray and x-ray detectors, fabricated by sputtering technique, have been studied. The CdZnTe crystal was grown by the High Pressure Bridgman method. Current-voltage measurements show that the leakage current is reduced by an order of magnitude when the m-i-n detector is reversed biased. This is due to increased contact barriers, which produced effective blocking contacts. An energy resolution of 3.6 percent for the 59.6 keV line of 241Am was obtained in the reverse bias, with almost no energy resolution for the forward bias due to excessive leakage current.

Paper Details

Date Published: 19 October 1999
PDF: 7 pages
Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); doi: 10.1117/12.366629
Show Author Affiliations
Stephen U. Egarievwe, Fisk Univ. (United States)
Henry Chen, Fisk Univ. (United States)
Kaushik Chattopadhyay, Fisk Univ. (United States)
Jean-Olivier Ndap, Fisk Univ. (United States)
Oludurotimi O. Adetunji, Fisk Univ. (United States)
T. McMillan, Fisk Univ. (United States)
Oghaghare K. Okobiah, Fisk Univ. (United States)
Arnold Burger, Fisk Univ. (United States)
Ralph B. James, Sandia National Labs. (United States)


Published in SPIE Proceedings Vol. 3768:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics
Ralph B. James; Richard C. Schirato, Editor(s)

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