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Proceedings Paper

Radiation hardness of silicon detectors manufactured on oxygen- and carbon-enriched material
Author(s): Arie Ruzin; Maurice Glaser; Francois Lemeilleur
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Paper Abstract

Recent results on the radiation hardness of silicon detectors fabricated on gloat zone bulk silicon enriched by carbon and oxygen are reported. The results indicate that the radiation hardness of silicon detectors can be determined by the concentration of oxygen and carbon atoms in the bulk material. The study has been carried out in the framework of the RD48 collaboration, which is studying the radiation hardening of silicon detectors.

Paper Details

Date Published: 19 October 1999
PDF: 9 pages
Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); doi: 10.1117/12.366608
Show Author Affiliations
Arie Ruzin, CERN--European Lab. for Particle Physics (Israel)
Maurice Glaser, CERN--European Lab. for Particle Physics (Switzerland)
Francois Lemeilleur, CERN--European Lab. for Particle Physics (Switzerland)


Published in SPIE Proceedings Vol. 3768:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics
Ralph B. James; Richard C. Schirato, Editor(s)

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