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Proceedings Paper

Novel x-ray and gamma-ray drift detectors based on silicon and compound semiconductors
Author(s): Jan S. Iwanczyk; Bradley E. Patt; Carolyn R. Tull; Lawrence R. MacDonald
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Paper Abstract

Large area silicon drift detectors (SDD) with areas up to approximately 1 cm2 have been fabricated for x-rays. Recent novel designs have produced very low dark current, high electric field, and hence low noise and good charge collection. The developed structures were evaluated with low noise input amplification electronic components on Peltier coolers so that the temperature could be adjusted. Energy resolution of 143 eV FWHM at 5.9 keV was measured with a 50 mm2 SDD whose corresponding noise level was 70 eV FWHM.

Paper Details

Date Published: 19 October 1999
PDF: 12 pages
Proc. SPIE 3768, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics, (19 October 1999); doi: 10.1117/12.366589
Show Author Affiliations
Jan S. Iwanczyk, Photon Imaging, Inc. (United States)
Bradley E. Patt, Photon Imaging, Inc. (United States)
Carolyn R. Tull, Photon Imaging, Inc. (United States)
Lawrence R. MacDonald, Photon Imaging, Inc. (United States)

Published in SPIE Proceedings Vol. 3768:
Hard X-Ray, Gamma-Ray, and Neutron Detector Physics
Ralph B. James; Richard C. Schirato, Editor(s)

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