Share Email Print
cover

Proceedings Paper

Novel backside structure with improved energy resolution
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

We have experimentally shown that heavily doped p+ layer at the silicon-silicon dioxide interface leads to charge losses in the signal electron clouds due to surface recombination and results in degraded energy resolution of the response of backside illuminated AXAF CCDs to low energy x-rays. The size of secondary ionization cloud generated by an incident x-ray photon can be much larger than that predicted from higher energy electron range-energy relations as the frontside illuminated CCD, while having high quantum efficiency at low energies. It shrinks the area of the heavily doped silicon to less than 2 percent of the pixel are, thus dramatically reducing recombination losses. If this design is combined with fully depleted silicon structures, it promises a highly efficiency x-ray sensor with a good energy resolution throughput the 0.1-15 keV band.

Paper Details

Date Published: 22 October 1999
PDF: 6 pages
Proc. SPIE 3765, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X, (22 October 1999); doi: 10.1117/12.366512
Show Author Affiliations
Gregory Y. Prigozhin, Massachusetts Institute of Technology (United States)
Michael J. Pivovaroff, Massachusetts Institute of Technology (United States)
Steven E. Kissel, Massachusetts Institute of Technology (United States)
Mark W. Bautz, Massachusetts Institute of Technology (United States)
George R. Ricker, Massachusetts Institute of Technology (United States)


Published in SPIE Proceedings Vol. 3765:
EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy X
Oswald H. W. Siegmund; Kathryn A. Flanagan, Editor(s)

© SPIE. Terms of Use
Back to Top