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Proceedings Paper

Characteristics of photosensors based on solid solutions of AIIBVI compounds
Author(s): Gennady V. Lubegin; Vladimir V. Gusliannikov
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Paper Abstract

In the work there are submitted the results of the research of photosensors on a base of solid solutions of A(superscript II)B(superscript VI) compounds for measurement and control of intensity of low-level light in narrow areas of spectrum. The basic principles of technological process of manufacturing of injection photo diodes are described. The results of measurements of voltage-current characteristics and spectral characteristics of photo diodes, received in laboratory technological process with the various contents of cadmy and zinc in ZnCd(subscript 1-x)S(subscript x) solid solutions, and also sulfur and selen in CdS(subscript 1-x)Se(subscript x) solid solutions are submitted. The investigation results have shown, that photosensors work at low positive bias voltage, do not require cooling, have high sensitivity in a maximum and narrow selectivity. In CdS(subscript 1-x)Se(subscript x)- photosensors the photosensitive protecting coverage of transparent films on the base of As(subscript 2)S(subscript 3) compounds is applied. The opportunity of creation of a wide discrete range of photo diodes with the sensitivity in range from near ultraviolet up to near infrared area of spectrum is shown.

Paper Details

Date Published: 19 October 1999
PDF: 6 pages
Proc. SPIE 3901, Photonics for Transportation, (19 October 1999); doi: 10.1117/12.365940
Show Author Affiliations
Gennady V. Lubegin, Moscow State Institute of Electronic Engineering (Russia)
Vladimir V. Gusliannikov, Moscow State Institute of Electronic Engineering (Russia)


Published in SPIE Proceedings Vol. 3901:
Photonics for Transportation
Vladimir G. Inozemtsev; Milos Klima; Victor A. Shilin, Editor(s)

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