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Proceedings Paper

Transferable silicon nitride microcavities
Author(s): Kevin J. Winchester; Sue M.R. Spaargaren; John M. Dell
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Paper Abstract

In the field of micro-electro-mechanical systems (MEMS), the ability to construct self supporting or suspended structures is essential for many devices. Well-established technologies exist for the fabrication of such structures, many of which rely on the deposition of SiNx layers. Such layers are usually grown by low-pressure chemical vapor deposition which requires high process temperatures. Lower process temperatures can be achieved through plasma enhanced chemical vapor deposition, however even these lower temperatures place a major restriction on the order in which processing can occur. For some semiconductor materials such as HgCdTe, this prohibits the straightforward use of such structures. A novel self-supporting SiNx membrane technology that can be applied to temperature sensitive semiconductor devices has been developed. In this technology the microcavity structure is constructed on a reusable GaAs substrate, from which it can be removed and bonded via van der Waals forces to a new substrate or device.

Paper Details

Date Published: 1 October 1999
PDF: 10 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364511
Show Author Affiliations
Kevin J. Winchester, Univ. of Western Australia (Australia)
Sue M.R. Spaargaren, Univ. of Western Australia (Australia)
John M. Dell, Univ. of Western Australia (Australia)


Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)

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