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Proceedings Paper

Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films
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Paper Abstract

Binary metal oxide MoO3-TiO2 thin films have been prepared by the sol-gel process. These films were deposited on sapphire substrates with interdigital electrodes and single crystal silicon substrates. The films were annealed at different temperatures of 400 degrees C, 500 degrees C, and 600 degrees C for 1 hour. The morphology, crystalline structure and chemical composition of the films have been analyzed using SEM, XRD, RBS and XPS techniques. The SEM analysis showed that the films annealed at 500 degrees C are smooth and uniform with nanosized grains and probes. RBS and XPS characterizations have revealed that the films are nearly stoichiometric. In this work, we have investigated the sensitivity of this material for oxygen and ozone gases. The MoO3-based gas sensor is capable of detecting O2 down to 50 ppm with a very fast response time. Adding TiO2 to MoO3 thin films tremendously reduced the resistance, which assisted the measurement of ozone gas sensing.

Paper Details

Date Published: 1 October 1999
PDF: 8 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364505
Show Author Affiliations
Yongxiang Li, Royal Melbourne Institute of Technology (Australia)
Muralihar K. Ghantasala, Royal Melbourne Institute of Technology (Australia)
Kosmas Galatsis, Royal Melbourne Institute of Technology (Australia)
Wojtek Wlodarski, Royal Melbourne Institute of Technology (Australia)


Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)

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