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Proceedings Paper

Local defect real-time monitor system in lithography
Author(s): Hung-Chih Chen; Tse-Yu Lin; Yao-Chang Chu; Chih-Chien Hung
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Paper Abstract

In lithography process local defocus is a troublesome problem. That is because local defocus is too difficult to catch in time with current monitor method. Once the local defocus symptoms have been observed at ADI. A lot of wafers should suffer repeating local defect from wafer to wafer. in this paper. A real time monitor system will be presented. And the catching rate could reach to 80 percent. Even reach to more catching rate if set specific specification for varied layers. Because varied layers allow different focus tolerance.

Paper Details

Date Published: 1 October 1999
PDF: 7 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364496
Show Author Affiliations
Hung-Chih Chen, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Tse-Yu Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Yao-Chang Chu, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Chien Hung, Taiwan Semiconductor Manufacturing Co. (Taiwan)

Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)

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