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Proceedings Paper

Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy
Author(s): Dan V. Nicolau; Cristina Bercu; Simion Coca; Takahisa Taguchi
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Paper Abstract

We propose a method for the monitoring of the glass transition temperature of the resist used in semiconductor lithography based on the broad-band Nuclear Magnetic Resonance technique. The method is capable to trace the evolution of the mobility of several major chemical species present in a resist system versus processing parameters, e.g. exposure energy and bake temperature. The most important components, namely the lower molecular weight photoactive compound and the higher molecular weight base resin, were characterized, in accordance with their signals, as mobile and the rigid component, respectively. The method has the potential for being used for process optimization and for on-line monitoring.

Paper Details

Date Published: 1 October 1999
PDF: 7 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364492
Show Author Affiliations
Dan V. Nicolau, Swinburne Univ. of Technology (Australia)
Cristina Bercu, ICECHIM (Romania)
Simion Coca, ICECHIM (Romania)
Takahisa Taguchi, Osaka National Research Institute (Japan)


Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)

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