We have set up a LPCVD system enabling us to deposit ultra low stress single layer silicon-rich nitride film at high temperature with fast deposition rate for micro-structures fabrication. Silicon-rich nitride films deposited at high temperature have ultra low stress and are relatively independent of silicon and nitrogen containing gas-flow ratio during deposition. Deposition process parameters were optimized employing Taguchi method and no post deposition process is required to obtain low stress films. Detailed study of the effects of deposition parameters on film properties is also presented. The high temperature deposited ultra low stress silicon rich nitride film is resistant to all commonly used silicon anisotropic etchants, an ideal material for various micro-structures fabrication.

Date Published: 1 October 1999
PDF: 6 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364478

Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)