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Proceedings Paper

Ultralow-stress silicon-rich nitride films for microstructure fabrication
Author(s): MingCheng Cheng; Wei-Gei Ho; Chin Piao Chang; Wen Sheh Huang; Ruey-Shing Star Huang
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Paper Abstract

We have set up a LPCVD system enabling us to deposit ultra low stress single layer silicon-rich nitride film at high temperature with fast deposition rate for micro-structures fabrication. Silicon-rich nitride films deposited at high temperature have ultra low stress and are relatively independent of silicon and nitrogen containing gas-flow ratio during deposition. Deposition process parameters were optimized employing Taguchi method and no post deposition process is required to obtain low stress films. Detailed study of the effects of deposition parameters on film properties is also presented. The high temperature deposited ultra low stress silicon rich nitride film is resistant to all commonly used silicon anisotropic etchants, an ideal material for various micro-structures fabrication.

Paper Details

Date Published: 1 October 1999
PDF: 6 pages
Proc. SPIE 3892, Device and Process Technologies for MEMS and Microelectronics, (1 October 1999); doi: 10.1117/12.364478
Show Author Affiliations
MingCheng Cheng, National Tsing Hua Univ. (Taiwan)
Wei-Gei Ho, National Tsing Hua Univ. (Taiwan)
Chin Piao Chang, National Tsing Hua Univ. (Taiwan)
Wen Sheh Huang, National Tsing Hua Univ. (Taiwan)
Ruey-Shing Star Huang, National Tsing Hua Univ. (Taiwan)


Published in SPIE Proceedings Vol. 3892:
Device and Process Technologies for MEMS and Microelectronics
Kevin H. Chau; Sima Dimitrijev, Editor(s)

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