Share Email Print
cover

Proceedings Paper

New sensor-on-chip technology for micromechanical acceleration-threshold switches
Author(s): Michael Wycisk; Josef Binder; Sven Michaelis; Hans-Joerg Timme
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

This paper describes the development of a sensor for measuring acceleration-thresholds in the low-g range. The processing of the device is based on a new integration concept for MEMS called Additive Electroplating Technology (AET). This technology allows the integration of fixed and moveable electroplated microstructures on top of a standard ASIC by a low temperature back-end process. This permits the fabrication of the sensor on top of a CMOS signal processing circuit, where the development and the fabrication of the ASIC is absolutely independent of the following back-end process. In this context, the additive electroplating technology combines the advantages of monolithic- and hybrid-integrated sensor with respect to the reduction of interconnections, short development cycles, low tooling costs, and high design flexibility. A detailed technical concept for the fabrication of electroplated micromechanical acceleration switches is presented in this paper. It comprises the aspects of the interface technology between the ASIC and the sensor structure, the sensor fabrication and the back-end processing to capsulate the dies. The paper concludes with a characterization of the devices. The measured results are compared with the expected results of the simulation.

Paper Details

Date Published: 29 September 1999
PDF: 9 pages
Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); doi: 10.1117/12.364462
Show Author Affiliations
Michael Wycisk, Univ. of Bremen (Germany)
Josef Binder, Univ. of Bremen (Germany)
Sven Michaelis, Infineon Technologies AG (Germany)
Hans-Joerg Timme, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 3891:
Electronics and Structures for MEMS
Neil W. Bergmann; Olaf Reinhold; Norman C. Tien, Editor(s)

© SPIE. Terms of Use
Back to Top