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Proceedings Paper

Self-biased transconductance amplifier
Author(s): Gilles Amendola; Yves Blanchard; Anne Exertier; Serge Spirkovitch; Guo Neng Lu; George Alquie
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Paper Abstract

A CMOS, self-biased transconductance amplifier has been designed to be associated and integrated with a silicon capacitive microphone. To meet requirements especially on gain sensitivity, power consumption, and minimization of parasite capacitance effect, we have proposed a cascode structure with the cascode transistor source used as signa input. Switched-capacitor techniques have been applied for realizing self-bias for the amplifier and ensuring its high- gain operation. The proposed amplifier has been designed and fabricated in a 0.8 micrometers CMOS process. It has a surface area of 210 micrometers by 170 micrometers . Experimental results obtained from measuring the fabricated chip show a high-gain sensitivity and a low power dissipation for the amplifier. Results of simulations and measurements have been discussed.

Paper Details

Date Published: 29 September 1999
PDF: 8 pages
Proc. SPIE 3891, Electronics and Structures for MEMS, (29 September 1999); doi: 10.1117/12.364455
Show Author Affiliations
Gilles Amendola, Ecole Superieure d'Ingenieures en Electronique et Electrotechnique (France)
Yves Blanchard, Ecole Superieure d'Ingenieures en Electronique et Electrotechnique (France)
Anne Exertier, Ecole Superieure d'Ingenieures en Electronique et Electrotechnique (France)
Serge Spirkovitch, Ecole Superieure d'Ingenieures en Electronique et Electrotechnique (France)
Guo Neng Lu, Univ. de Paris VI-Pierre et Marie Curie (France)
George Alquie, Univ. de Paris VI-Pierre et Marie Curie (France)


Published in SPIE Proceedings Vol. 3891:
Electronics and Structures for MEMS
Neil W. Bergmann; Olaf Reinhold; Norman C. Tien, Editor(s)

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