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Proceedings Paper

Laser-induced formation of semiconductor films based on transition-metal silicides
Author(s): Sergey A. Mulenko; Volodymyr S. Ovechko
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Paper Abstract

Two methods for the formation of semiconductor films were proposed: (1) laser chemical vapor deposition was based on the deposition of elements owing to the photodissociation of iron carbonyl (Fe(CO)5) vapors while irradiating Si substrate surface with focused Ar+-laser radiation ((lambda) L equals 488 nm) followed by focused YAG:Nd+3-laser radiation ((lambda) L equals 1064 nm) treatment of the deposited film at the power density of 105 W/cm2 resulted in the formation of semiconductor phases: (beta) -iron disilicide ((beta) -FeSi2) and silicon carbide (SiC) which formed carbide-silicide phase with such stoichiometric composition FeSi2-XCX and bandgap about 0.1 eV; (ii) electron beam sputtering was based on pure iron sputtering on Si substrate surface followed by focused YAG:Nd+3-laser radiation treatment of the deposited film at the power density ranging from 1.35 X 105 W/cm2 to 2.1 X 105 W/cm2 resulted in the formation of semiconductor phase ((beta) -SiFe2) with maximum bandgap about 0.05 eV and metal phase ((alpha) -FeSi2).

Paper Details

Date Published: 20 September 1999
PDF: 8 pages
Proc. SPIE 3822, Computer-Controlled Microshaping, (20 September 1999); doi: 10.1117/12.364238
Show Author Affiliations
Sergey A. Mulenko, Institute for Metal Physics (Ukraine)
Volodymyr S. Ovechko, Kiev Taras Shevchenko Univ. (Ukraine)


Published in SPIE Proceedings Vol. 3822:
Computer-Controlled Microshaping

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