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Proceedings Paper

Characterization of UV-induced radiation damage to Si-based photodiodes
Author(s): Rajeev Gupta; Keith R. Lykke; Ping-Shine Shaw; Joseph L. Dehmer
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Paper Abstract

We have made direct measurements of the internal quantum efficiency and the reflectivity of UV-damped silicon photodiodes in the spectral range of 125 nm to 320 nm. The above quantities, coupled with absolute spectral responsivities, may yield unique information leading to the identification of the mechanisms responsible for the degradation of performance of the silicon photodiodes in the ultraviolet. The measurements were made using synchrotron radiation from the NIST synchrotron ultraviolet radiation facility and an absolute cryogenic radiometer as a primary standard detector.

Paper Details

Date Published: 28 September 1999
PDF: 7 pages
Proc. SPIE 3818, Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II, (28 September 1999); doi: 10.1117/12.364158
Show Author Affiliations
Rajeev Gupta, National Institute of Standards and Technology (United States)
Keith R. Lykke, National Institute of Standards and Technology (United States)
Ping-Shine Shaw, National Institute of Standards and Technology (United States)
Joseph L. Dehmer, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 3818:
Ultraviolet Atmospheric and Space Remote Sensing: Methods and Instrumentation II
George R. Carruthers; Kenneth F. Dymond, Editor(s)

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