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Proceedings Paper

High-aspect-ratio submicron microstructures in LiNbO3: fabrication and potential applications to photonic devices
Author(s): Shizhuo Yin
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Paper Abstract

Fabrication of high aspect ratio submicron to nanometer range micro structures in LiNbO3 using a state of the art Schlumberger AMS 3000 focused ion beam system is presented. The submicron structures with about 350 nm width and 1600 nm depth are fabricated by employing XeF2 gas assisted Gallium ion beam etching with 50 pA of ion beam current. A variety of opto-electronic devices such as micro sensors, directional couplers, extremely compact electro- optic modulators and wavelength filters could be built based on this type of high aspect ratio submicron structures in LiNbO3, which may lead to the next generation of integrated opto-electronic devices that have higher levels of device integration and enhanced functionality.

Paper Details

Date Published: 1 October 1999
PDF: 4 pages
Proc. SPIE 3805, Photonic Devices and Algorithms for Computing, (1 October 1999); doi: 10.1117/12.364007
Show Author Affiliations
Shizhuo Yin, The Pennsylvania State Univ. (United States)

Published in SPIE Proceedings Vol. 3805:
Photonic Devices and Algorithms for Computing
Khan M. Iftekharuddin; Abdul Ahad Sami Awwal, Editor(s)

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