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Proceedings Paper

Gate dielectric monitoring using noncontact electrical characterization
Author(s): Jerzy Ruzyllo; P. Roman; D. O. Lee; M. Brubaker; Emil Kamieniecki
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Paper Abstract

Reduction of gate oxide thicknesses to the tunnelable range as well as the anticipated introduction of alternative gate dielectric materials create new challenges regarding monitoring of gate insulation processes. In this paper methodologies applied in gate oxide characterization are considered and advantages of non-contact methods are emphasized. More specifically, the Surface Charge Profiling (SCP) method, which is particularly well suited for this application is discussed. This method allows measurement of the charge density without any bias on the oxide, and hence, without any current flow across the oxide. Therefore, measurements of surface/oxide charge density as well surface recombination lifetime can be carried on oxides in which charge measurement using other methods would be prevented due to significant current. This capability of the SCP method is demonstrated using experimental results.

Paper Details

Date Published: 27 August 1999
PDF: 9 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361335
Show Author Affiliations
Jerzy Ruzyllo, The Pennsylvania State Univ. (United States)
P. Roman, The Pennsylvania State Univ. (United States)
D. O. Lee, The Pennsylvania State Univ. (United States)
M. Brubaker, The Pennsylvania State Univ. (United States)
Emil Kamieniecki, QC Solutions, Inc. (United States)

Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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