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Proceedings Paper

High-resolution tracing method for monitoring metal contaminants in silicon device manufacturing processes
Author(s): Hirofumi Shimizu; Shuichi Ishiwari
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Paper Abstract

An extraction method of micro-contaminants detrimental for silicon (Si) devices and its impact on clean technology are elaborated to focus on upgrading device performances. Deleterious metal impurities on wafer surfaces such as Fe, Cu, Ni and Al are analyzed using an improved pack extraction method (PEM), in which sample wafers were enclosed in a cleaned teflon bag with aqueous acid solutions. Upon the extraction of impurities, three types of solutions [(I) HCl/H2O, (II) HF/H2O and (III) HF/HNO3/H2O], were successively replaced one after another in the cleaned teflon bag, resulting in measuring impurities on oxide surfaces, oxides and SiO2-Si interfaces, separately. The monitoring of these harmful impurities helps feed back to reduce the impurities in device manufacturing processes.

Paper Details

Date Published: 27 August 1999
PDF: 7 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361334
Show Author Affiliations
Hirofumi Shimizu, Nihon Univ. (Japan)
Shuichi Ishiwari, Hitachi Plant Engineering & Construction Co., Ltd. (Japan)

Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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