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Proceedings Paper

Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing
Author(s): Joshua P. Tower; Emil Kamieniecki; M. C. Nguyen; Adrien Danel
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Paper Abstract

The Surface Charge Profiler (SCP) has been introduced for monitoring and development of silicon epitaxial processes. The SCP measures the near-surface doping concentration and offers advantages that lead to yield enhancement in several ways. First, non-destructive measurement technology enables in-line process monitoring, eliminating the need to sacrifice production wafers for resistivity measurements. Additionally, the full-wafer mapping capability helps in development of improved epitaxial growth processes and early detection of reactor problems. As examples, we present the use of SCP to study the effects of susceptor degradation in barrel reactors and to study autodoping for development of improved dopant uniformity.

Paper Details

Date Published: 27 August 1999
PDF: 8 pages
Proc. SPIE 3884, In-Line Methods and Monitors for Process and Yield Improvement, (27 August 1999); doi: 10.1117/12.361332
Show Author Affiliations
Joshua P. Tower, QC Solutions, Inc. (United States)
Emil Kamieniecki, QC Solutions, Inc. (United States)
M. C. Nguyen, Epitech Sumitomo Sitix Europe (France)
Adrien Danel, CEA-LETI (France)


Published in SPIE Proceedings Vol. 3884:
In-Line Methods and Monitors for Process and Yield Improvement
Sergio A. Ajuria; Jerome F. Jakubczak, Editor(s)

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