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Proceedings Paper

Optimizing the target-to-wafer spacing for highly uniform PVD films
Author(s): Eric Paton; Ray Pena; Jeff Morioka; Karen Sprock; Jesus Morillo; Kao Sun Tsu
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Paper Abstract

This research examines the optimum spacing between the Physical Vapor Deposition (PVD) target and the wafer substrate, at various stages in the erosion life of the target. As the target erodes, the surface becomes uneven with ring shaped grooves. This effects the radial distribution of material flux onto the wafer, and requires the wafer to be moved further from the target. The optimal target to wafer spacing is plotted against target lifetime for different types of chamber configurations and target materials. Target materials are Ti, TiN, and Al, and chamber configurations are standard Magnetron PVD, Collimated PVD, and Ionized Metal Plasma (IMP) PVD. TiN chambers with Dura TTN magnets show predictable behavior during the life of the target, while Type A magnets and all other chamber configurations show almost now drift in the optimum spacing. Thus, it was decided only Dura TTN (TiN) chambers required spacing compensation. Rate-of- change constants for TiN chambers were input into software provided by Applied Materials, to dynamically adjust the spacing as the target erodes. Thickness uniformity of less than 1% was maintained throughout the target's 1600 KWHrs life.

Paper Details

Date Published: 3 September 1999
PDF: 8 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361327
Show Author Affiliations
Eric Paton, Advanced Micro Devices, Inc. (United States)
Ray Pena, Advanced Micro Devices, Inc. (United States)
Jeff Morioka, Advanced Micro Devices, Inc. (United States)
Karen Sprock, Advanced Micro Devices, Inc. (United States)
Jesus Morillo, Advanced Micro Devices, Inc. (United States)
Kao Sun Tsu, Advanced Micro Devices, Inc. (United States)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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