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Proceedings Paper

IC yield enhancement through optimization of photolithography pattern at the isolation step
Author(s): Kerry J. Nagel; Steve Spivey; Ping Wang
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Paper Abstract

The yield of an oxide isolated bipolar technology was substantially enhanced by changing the photolithography processing at the isolation layer. Changing the exposure bias improved the Cpk by 25% and the yield by 6%. Changing to a different develop chemistry eliminated corner defects and substantially reduced fallout for leakage. Corner defects are correlated to microgrooves and protuberances in the photoresist profile. In this paper, the mechanism for the yield improvement is explained.

Paper Details

Date Published: 3 September 1999
PDF: 8 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361322
Show Author Affiliations
Kerry J. Nagel, Motorola, Inc. (United States)
Steve Spivey, Motorola, Inc. (United States)
Ping Wang, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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