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Proceedings Paper

Critical structure characterization in 0.25-um metal masking
Author(s): Chung Yih Lee; Wei Wen Ma; Sajan R. Marokkey; Alex Tsun-Lung Cheng
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Paper Abstract

The lithography process for 0.25 micrometer metal masking faces the challenge of tight design rule. Island patterning and line-end shortening have become more important due to the zero or small contact/via enclosure. A full understanding of the process latitude is necessary to choose the right process for a certain metal layer of 0.25 micrometer technology. In this paper, we develop a methodology to evaluate and optimize a metal asking process based on a set of critical structures. By characterized the overlapping process window for these critical structures, a comprehensive process latitude can be defined. This methodology is applied to the optimization of stepper NA/PC setting and the selection between I-line and DUV processes.

Paper Details

Date Published: 3 September 1999
PDF: 5 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361319
Show Author Affiliations
Chung Yih Lee, Chartered Semiconductor Manufacturing Ltd. (Singapore)
Wei Wen Ma, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Sajan R. Marokkey, Chartered Semiconductor Manufacturing, Ltd. (Singapore)
Alex Tsun-Lung Cheng, Chartered Semiconductor Manufacturing, Ltd. (Singapore)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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