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Proceedings Paper

Characterization of various Ti-Al film alloys as wafer temperature metrology systems
Author(s): Brad M. Axan
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Paper Abstract

Of the various techniques used to monitor wafer temperature during hot metal sputter deposition, use of wafers with Ti/Al alloy film stacks provides high consistency, run-to-run repeatability, good temperature sensitivity, and ease of use in a production factory. This work details the development of improved Ti/Al temperature monitor wafers for use on hot metal physical vapor deposition (PVD) systems. Various combinations of (1) Ti, TiW, and AlCu alloys, and (2) varying thickness of each metal layer were ran at three different heater temperature setpoints on an Applied Materials Endura 5500 PVD system. The experimental design is discussed and the temperature sensitivities are analyzed for each Ti/Al film stack combination and subsequently compared to the standard Ti/Al alloy monitor performance. The correct combination of AlCu film alloy and AlCu film thickness resulted in a monitor three times more sensitive than the existing Ti/Al monitor.

Paper Details

Date Published: 3 September 1999
PDF: 9 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361317
Show Author Affiliations
Brad M. Axan, Motorola, Inc. (United States)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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