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Proceedings Paper

Combine technique of conducting materials testing at high pressures
Author(s): Vladimir V. Shchennikov; Andrew Yu. Derevskov; Vladimir I. Osotov
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Paper Abstract

The technique of investigations of resistance (rho) , thermoelectric power S, and galvanomagnetic properties of materials by the two-terminal method of measurements under pressure up to 30 GPa is discussed. The combine of stationary and nonstationary regimes of treatment, variation of high pressure chambers with conducting or insulating plungers and using of simultaneous and parallel measurements of various properties are proposed to estimate the parameters of materials under testing. The results of investigations of initial semiconductor and high pressure metal phases of Ge, Te, and molecular solid-Iodine up to 30 GPa at the diamond- plungers apparatus are represented. The technique may be useful for semiconductor fabricated device treatment.

Paper Details

Date Published: 3 September 1999
PDF: 8 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361316
Show Author Affiliations
Vladimir V. Shchennikov, Institute of Metals Physics (Russia)
Andrew Yu. Derevskov, Institute of Metals Physics (Russia)
Vladimir I. Osotov, Institute of Metals Physics (Russia)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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