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Proceedings Paper

Optimizing the clean effect of wafer backside in lithography developer process
Author(s): Hsun-Peng Lin; Chun-Hong Chang; Chih-Hsiung Lee; Sheng-Liang Pang; Kuo-Liang Lu
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Paper Abstract

In the photo process, the defect of developer residue on wafer backside is always negligible. Such as figure 1 is the photographs of residue defect onto wafer backside, this defect is easy to induce some problems such as a wafer transfer error, chamber particle in the etcher machine and rework issue for cleaning wafer backside. In this paper, we provide serval methods to prevent the 'developer residue on wafer backside issue' reoccurrence. Specially the clean effect of wafer backside of developer process had to be improved effectively, the effective clean method include the gap (distance) be optimized from the knife edge to wafer backside with the various film (Silicon; Nitride; Poly: TEOS; PESIN film) and the liquid drain port of developer machine had to be modified to reduce the remained liquid that is absorbed onto wafer backside.

Paper Details

Date Published: 3 September 1999
PDF: 7 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361309
Show Author Affiliations
Hsun-Peng Lin, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chun-Hong Chang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Chih-Hsiung Lee, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Sheng-Liang Pang, Taiwan Semiconductor Manufacturing Co. (Taiwan)
Kuo-Liang Lu, Taiwan Semiconductor Manufacturing Co. (Taiwan)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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