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Proceedings Paper

Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing
Author(s): Mohan Bhan; Fred H. Wu; R. A. Srinivas; Brian Metzger; Zvi Lando; Murali K. Narasimhan; Fusen E. Chen
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Paper Abstract

The TiCl4 based CVD-Ti process has been identified as the candidate of choice for the advanced contact metallization. A BKM wet clean recovery (WCR) procedure, involving extended chamber seasoning, has been developed for the CVD-Ti process. The new WCR methodology takes only 5 wafer processing to stabilize the CVD-Ti chamber condition and film properties. It has been found that a chamber seasoning for 200 sec, performed after every idle time (greater than 15 min.) and thermal periodic clean (at wafer count # 200), helps to maintain the CVD-Ti process performance. The reliability of the new chamber operating procedures was validated through a successful 3000 wafer marathon demonstration.

Paper Details

Date Published: 3 September 1999
PDF: 7 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361307
Show Author Affiliations
Mohan Bhan, Applied Materials Inc. (United States)
Fred H. Wu, Applied Materials Inc. (Taiwan)
R. A. Srinivas, Applied Materials Inc. (United States)
Brian Metzger, Applied Materials Inc. (United States)
Zvi Lando, Applied Materials Inc. (United States)
Murali K. Narasimhan, Applied Materials Inc. (United States)
Fusen E. Chen, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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