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Proceedings Paper

Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond
Author(s): Hyeon-Sang Shin; Myung-Pil Kim; Jin-Woong Kim; YilWook Kim; Il-Hyun Choi
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Paper Abstract

A chemically assisted physical etching has been developed for the patterning of the Pt electrode with Cl2/Ar Plasma. Cl2 plasma performs a very special role which leads to a fence free Pt etching with the highly steep profile. It was found that Pt-Cl compounds on the etch residue were detected by x-ray photoelectron spectroscopy (XPS) and optical emission spectroscopy (OES), which means Cl2 plasma could generate a chemical reaction during the Pt etching. The hard mask based Pt etch process confirms that a very fine 0.15 micrometer l/s pattern could be achieved with less than 0.05 micrometer CD bias, fence free and the nearly vertical profile. And also, BST capacitors with an optimized Pt electrode shows less than 1fA/cell leakage current at 1 V and it is enough value for the application to 1 Gb DRAM and beyond.

Paper Details

Date Published: 3 September 1999
PDF: 9 pages
Proc. SPIE 3882, Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V, (3 September 1999); doi: 10.1117/12.361306
Show Author Affiliations
Hyeon-Sang Shin, Hyundai Electronics Industries Co., Ltd. (South Korea)
Myung-Pil Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Jin-Woong Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
YilWook Kim, Hyundai Electronics Industries Co., Ltd. (South Korea)
Il-Hyun Choi, Hyundai Electronics Industries Co., Ltd. (South Korea)


Published in SPIE Proceedings Vol. 3882:
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
Anthony J. Toprac; Kim Dang, Editor(s)

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