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Proceedings Paper

New design methodologies in (111)-oriented silicon wafers
Author(s): R. Edwin Oosterbroek; J. W. Berenschot; A. J. Nijdam; Gregory Pandraud; Miko C. Elwenspoek; Albert van den Berg
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Paper Abstract

New methodologies in anisotropic wet-chemical etching of oriented silicon allowing useful process designs combined with smart mask-to crystal-orientation-alignment are presented. The described methods yield smooth, etch-step free surfaces as well as high-quality plan-parallel beams and membranes. With a combination of pre-etching at different depths and passivation steps, structures can be etched at different levels in a wafer. Design rules using the < 100 >-crystal orientation, supplemented with examples demonstrate the high potential of using < 100 > oriented wafers in microsystem design.

Paper Details

Date Published: 30 August 1999
PDF: 11 pages
Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361243
Show Author Affiliations
R. Edwin Oosterbroek, MESA Research Institute (Netherlands)
J. W. Berenschot, MESA Research Institute (Netherlands)
A. J. Nijdam, MESA Research Institute (Netherlands)
Gregory Pandraud, MESA Research Institute (Netherlands)
Miko C. Elwenspoek, MESA Research Institute (Netherlands)
Albert van den Berg, MESA Research Institute (Netherlands)


Published in SPIE Proceedings Vol. 3874:
Micromachining and Microfabrication Process Technology V
James H. Smith; Jean Michel Karam, Editor(s)

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