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Proceedings Paper

Resolution enhancement techniques for submicron deep trench processes
Author(s): Lijun Tong; Joyce Hsiang; Kuanchih Lin; Gary Newman
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Paper Abstract

Due to the rapid advancements in the data storage market, the development of new technologies and mechanisms are needed to support the continued growth of data storage systems. The concept and technology of Micro Electro Mechanical Systems (MEMS) can provide opportunities to meet these demands. Correspondingly, new MEMS devices can be made commercially available by sharing the benefits of developments in data storage systems. The photolithography requirements for thin film head (TFH) processing have grown increasingly challenging. Specifically, the resolution of submicron isolated features is required in thick photoresist; resulting in aspect ratios of nearly 10 to 1. To satisfy these imaging requirements, the use of i-line reduction lithography tools with variable numerical aperture and partial coherence are necessary. This study examines the influence of NA, (sigma) , and reticle bias on critical features in a typical TFH write-layer process. Combinations of NA and (sigma) were investigated for their impact on minimum feature size, process latitude, and sidewall angle. Process latitude was quantified for each illumination condition over a range of focus and exposure conditions.

Paper Details

Date Published: 30 August 1999
PDF: 9 pages
Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361233
Show Author Affiliations
Lijun Tong, Read Rite Corp. (United States)
Joyce Hsiang, Read Rite Corp. (United States)
Kuanchih Lin, Read Rite Corp. (United States)
Gary Newman, Nikon Precision Inc. (United States)


Published in SPIE Proceedings Vol. 3874:
Micromachining and Microfabrication Process Technology V
James H. Smith; Jean Michel Karam, Editor(s)

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