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Proceedings Paper

Ion beam sputter deposition of TiNi shape memory alloy thin films
Author(s): Sam T. Davies; Kazuyoshi Tsuchiya
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Paper Abstract

The development of functional or smart materials for integration into microsystem is of increasing interest. An example is the shape memory effect exhibited by certain metal alloys which, in principle, can be exploited in the fabrication of micro-scale manipulators or actuators, thereby providing on-chip micromechanical functionality. We have investigated an ion beam sputter deposition process for the growth of TiNi shape memory alloy thin films and demonstrated the required control to produce equiatomic composition, uniform coverage and atomic layer-by-layer growth rates on engineering surfaces. The process uses argon ions at intermediate energy produced by a Kaufman-type ion source to sputter non-alloyed targets of high purity titanium and nickel. Precise measurements of deposition rates allows compositional control during thin film growth. As the sputtering targets and substrates are remote from the discharge plasma, deposition occurs under good vacuum of approximately 10-6 mtorr thus promoting high quality films. Furthermore, the ion beam energetics allow deposition at relatively low substrate temperatures of < 150 degrees C with as-deposited films exhibiting shape memory properties without post-process high temperature annealing. Thermal imagin is used to monitor changes which are characteristic of the shape memory effect and is indicative of changes in specific heat capacity and thermal conductivity as the TiNi shape memory alloy undergoes martensitic to austenitic phase transformations.

Paper Details

Date Published: 30 August 1999
PDF: 8 pages
Proc. SPIE 3874, Micromachining and Microfabrication Process Technology V, (30 August 1999); doi: 10.1117/12.361219
Show Author Affiliations
Sam T. Davies, Univ. of Warwick (United Kingdom)
Kazuyoshi Tsuchiya, Univ. of Warwick (Japan)

Published in SPIE Proceedings Vol. 3874:
Micromachining and Microfabrication Process Technology V
James H. Smith; Jean Michel Karam, Editor(s)

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