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Proceedings Paper

Influence of doping Y2O3 and Nb2O5 on ZrO2 characteristics in ZrO2-SiO2-P2O5 semiconductive ceramic humidity sensors
Author(s): Xuzhou Hu; Xiaochun Hu; Yu Yang; Xinghui Wu; Henry M. van Driel; Xijia Gu
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Paper Abstract

Semiconductive ceramic humidity sensors based on ZnO2 * SiO2 * P2O5 doped with Y2O3 and Nb2O5 are prepared by the solid phase reaction at high temperature. Y2O3 and Nb2O5 change ZrO2 character from an isolator to N- and P-type semiconductor separately. The Y2O3-, Nb2O5- and non-doped samples have extremely different total resistance at the room temperature and a certain relative humidity. The former is far less than the later. By means of X-ray diffraction, Fourier infrared absorption and Raman backward scattering spectra, the microstructure of ZrO2 grain in non-doped and Y2O3- or Nb2O5-doped samples are known to belong respectively to monoclinic and tetragonal symmetrical crystal systems. On the basis of the standard absorption peak sites, four fundamental phonon energies of ZrO2 are calculated: TO equals 0.0457, LO equals 0.0365, TA equals 0.0069, LA equals 0.0249 ev. All the Fourier infrared absorption speaks of ZrO2 in each and every ZrO2 * SiO2 * P2O5 humidity sensor consist of two or more out of the four elementary phonons in different combinations. Any and every Raman backward scattering peak of ZrO2 is made up of two or more out of these phonons too.

Paper Details

Date Published: 8 September 1999
PDF: 5 pages
Proc. SPIE 3862, 1999 International Conference on Industrial Lasers, (8 September 1999); doi: 10.1117/12.361147
Show Author Affiliations
Xuzhou Hu, Univ. of Yunnan (China)
Xiaochun Hu, Univ. of Yunnan (China)
Yu Yang, Univ. of Yunnan (China)
Xinghui Wu, Univ. of Yunnan (China)
Henry M. van Driel, Univ. of Toronto (Canada)
Xijia Gu, Univ. of Toronto (Canada)

Published in SPIE Proceedings Vol. 3862:
1999 International Conference on Industrial Lasers
Fuxi Gan; Horst Weber; Zaiguang Li; Qingming Chen, Editor(s)

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