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Proceedings Paper

DC to 50-GHz wide-bandwidth InGaAs photodiodes and photoreceivers
Author(s): Abhay M. Joshi; Xinde Wang
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Paper Abstract

Discovery Semiconductors has developed 50 GHz “Dual-depletion InGaAs/InP Photodiodes”. The PIN operates at -3V reverse bias and has minimum responsivity of 0.7 AAV at 1.3 and 1.55 um wavelength. The Ripple Factor is less than ±1 dB for a wide band of frequencies, DC to 50 GHz. The salient feature of the PIN is an on-chip coplanar waveguide output for proper impedance matching. The PIN exhibits group delay of less than ± 20 psec across the entire bandwidth. Discovery Semiconductors has also designed 50 GHz InGaAs PIN / p-HEMT Amplifier Photoreceiver Opto-electronic Integrated Circuit (OEIC) with a voltage conversion gain of 60 VAV at 1550 nm. The Photoreceiver OEIC exhibits an electric back reflection (S22) of less than -10 dB across the entire 50 GHz bandwidth. The optical back reflection is better than -30 dB at 1300 and 1550 nm.

Paper Details

Date Published: 28 September 1999
PDF: 16 pages
Proc. SPIE 10295, Reliability of Optical Fibers and Optical Fiber Systems: A Critical Review, 102950C (28 September 1999); doi: 10.1117/12.361073
Show Author Affiliations
Abhay M. Joshi, Discovery Semiconductors, Inc. (United States)
Xinde Wang, Discovery Semiconductors, Inc. (United States)


Published in SPIE Proceedings Vol. 10295:
Reliability of Optical Fibers and Optical Fiber Systems: A Critical Review
Dilip K. Paul, Editor(s)

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