Share Email Print

Proceedings Paper

Optimization of pulsed GaAs IMPATT diodes for 200 GHz
Author(s): Christian Benz; Juergen Freyer; Helmut Grothe
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

RF power generation of IMPATT diodes at mm-wave frequencies is limited mainly by thermal effects. The challenge to obtain output power at 200 GHz and above can be met only by extremely high DC current densities to push the characteristic avalanche frequency near to the oscillation frequency. The active devices have to be optimized with regard to pure IMPATT mode operation, low break-down voltage and efficient heat dissipation. Since these three conditions influence each other, a compromise is necessary. From theoretical simulations a double-drift Read IMPATT diode structure result which is capable to be operated at DC current densities up to 225 kA/cm2 for short pulses of 50 ns with maximum device temperatures below 500 K. The initial material is grown by MBE technique taking special care to control the thickness and doping concentration of the different GaAs layers. The individual devices are fabricated by standard photo-resist technology with an integrated gold cone on top which adjusts the encapsulation height in the used full height inductive post waveguide resonator. Thereby, a low loss device mounting in the resonator without parasitic elements and an optimum impedance matching of diode and resonator can be realized. By means of different double-drift Read IMPATT structures the experimental results in terms of RF output power, conversion efficiency. At a frequency of 210 GHz 0.25 W output power and 1.8 percent conversion efficiency were realized at a DC current density of 225 kA/cm2. The experimental result are in good agreement with calculations applying a pulsed oscillator model.

Paper Details

Date Published: 9 September 1999
PDF: 7 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361062
Show Author Affiliations
Christian Benz, Technische Univ. Muenchen (Germany)
Juergen Freyer, Technische Univ. Muenchen (Germany)
Helmut Grothe, Technische Univ. Muenchen (Germany)

Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

© SPIE. Terms of Use
Back to Top