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Proceedings Paper

THz oscillators based on intraband transitions in bulk semiconductors
Author(s): Valery N. Shastin; R. Kh. Zhukavin; Andrei V. Muravjov; Ekaterina E. Orlova; Sergei G. Pavlov
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Paper Abstract

The operating principles and experimental results concerning far-IR lasers based on the intersubband hot holes optical transitions in crossed electric and magnetic fields as well as on the optically excited intracenter shallow impurity states are reviewed and discussed. The analysis of the state of the art and the possible directions of the development of p-Ge hot hole intersubband transitions laser and the result of the recent theoretical and experimental investigations of new THz media based on impurity transitions in Si doped by phosphorus are presented.

Paper Details

Date Published: 9 September 1999
PDF: 12 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361060
Show Author Affiliations
Valery N. Shastin, Institute for Physics of Microstructures (Russia)
R. Kh. Zhukavin, Institute for Physics of Microstructures (Russia)
Andrei V. Muravjov, Institute for Physics of Microstructures (United States)
Ekaterina E. Orlova, Institute for Physics of Microstructures (Russia)
Sergei G. Pavlov, Institute for Physics of Microstructures (Russia)

Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

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