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Proceedings Paper

Unconditionally stable high-current-density resonant tunnelling diodes
Author(s): Olivier Dupuis; J. C. Pesant; Patrick Mounaix; Francis Mollot; O. Vanbesien; D. Lippens
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Paper Abstract

In the context of very high frequency components, where quantum well devices have already shown promise, we report, in this communication, one the optimization, realization and characterization of GaAs and InP-based resonant tunneling diodes. A fully planar technology has been achieved for a GaAs triple-well structure, with the use of ion implantation techniques, whereas mesa-etched technology together with airbridge integration have been used for the InP-based devices. In terms of performance, both material system have shown excellent DC characteristics with a current density of 60 kA/cm2 associated with a current contrast of 6:1 for the GaAs-based RTD. An even higher current density has been achieved for the InP-based devices with 215 kA/cm2 while still preserving a peak-to-valley current ratio of 9:1. In addition, 1 micrometers 2-area InP-based RTD's have been found to be unconditionally stable without the necessity of a stabilizing network. These anticipated properties for very small area devices, which meet the stability criteria, enables us to perform small signal characteristics over the whole range of the negative differential resistance region. Analysis of the measured scattering parameters up to 50 GHz shows an increase in the capacitance-voltage characteristics.

Paper Details

Date Published: 9 September 1999
PDF: 9 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361054
Show Author Affiliations
Olivier Dupuis, Univ. de Lille I (France)
J. C. Pesant, Univ. de Lille I (France)
Patrick Mounaix, Univ. de Lille I (France)
Francis Mollot, Univ. de Lille I (France)
O. Vanbesien, Univ. de Lille I (France)
D. Lippens, Univ. de Lille I (France)

Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

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