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Proceedings Paper

Spatially resolved optical measurements of electric terahertz signals on passive devices
Author(s): Michael Nagel; Thomas Dekorsy; Heinrich Kurz
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Paper Abstract

Monolithic mm-wave integrated circuits have experienced strong improvements in operation frequencies in the last years. However, reports of III-V semiconductor transistors to have maximum frequencies as high as 400 GHz often stem from extrapolated measurements made at lower frequencies, due to bandwidth-limitations of the electronic equipment. The extrapolation of measurements at lower frequencies is insufficient for an accurate determination of the characteristics of passive or active elements in this frequency range. Another frequent restriction of conventional measurement techniques is that the signal can only be probed at specially designed interfaces. Optical sampling techniques allow the detection of electric fields with a high temporal and spatial resolution of 150 fs and 10 micrometers , respectively, at any point within or outside the device. In addition to S-parameter measurements at passive devices we demonstrate the spatial field distribution of an ultra-short electric pulse propagating through a band-stop filter with a broad stop-band probed via electrooptic sampling. To demonstrate the potentially high bandwidth of the measurement system the geometry of the stubs has been designed to show significant attenuation around a frequency f0 equals 350 GHz.

Paper Details

Date Published: 9 September 1999
PDF: 3 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361043
Show Author Affiliations
Michael Nagel, Rheinisch-Westfaelische Technische Hochschule Aachen (Germany)
Thomas Dekorsy, Rheinisch-Westfaelische Technische Hochschule Aachen (Germany)
Heinrich Kurz, Rheinisch-Westfaelische Technische Hochschule Aachen (Germany)

Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

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