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Free electron laser studies of carrier lifetime and lifetime design in semiconductors and ionic crystals
Author(s): Carl R. Pidgeon; Jon-Paul Wells; I. V. Bradley; B. N. Murdin
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Paper Abstract

A brief review is given of pump-probe carrier lifetime studies with the free electron laser at FOM-Rijnhuizen, emphasizing work on mid-IR interband recombination in narrow gap semiconductors. We compare results on the lead salt system with earlier work on HgCdTe and As-rich InAs/InAsSb strained layer superlattices, where we have studied the suppression of Auger recombination by band structure engineering. The Auger coefficient for either the lead slat structures or the As-rich strained layer superlattice is suppressed by some 2 orders of magnitude by comparison with HgCdTe of an equivalent bandgap composition. In addition we have made time resolved studied of local modes in ionic crystals, where non-radiative decay plays an important role in the optical pumping cycle of laser gain media. We have studied the local modes created upon the introduction of a light impurity, in particular the H-ion, in CaF2 in the spectral region 700 to 1200 cm-1. We have employed a two pulse photon echo experiment to remove the inhomogeneous broadening of the vibrational ensemble and measure the transverse relaxation time.

Paper Details

Date Published: 9 September 1999
PDF: 9 pages
Proc. SPIE 3828, Terahertz Spectroscopy and Applications II, (9 September 1999); doi: 10.1117/12.361030
Show Author Affiliations
Carl R. Pidgeon, Heriot-Watt Univ. (United Kingdom)
Jon-Paul Wells, Heriot-Watt Univ. and FOM Institute Rijnhuizen (United Kingdom)
I. V. Bradley, Heriot-Watt Univ. and FOM Institute Rijnhuizen (United Kingdom)
B. N. Murdin, Univ. of Surrey (United Kingdom)


Published in SPIE Proceedings Vol. 3828:
Terahertz Spectroscopy and Applications II
J. Martyn Chamberlain, Editor(s)

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