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Proceedings Paper

ILD thermal stability in deep-submicron technologies: from thin to ultrathin dielectric films
Author(s): David T. Hsu; Hyungkun Kim; Frank G. Shi; Bin Zhao; Maureen R. Brongo; P. Schilling; Shi-Qing Wang
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Paper Abstract

Thermal stability is a critical issue for polymer thin films being used as interlevel dielectrics (ILDs) in deep- submicron multilevel interconnection. One of crucial parameters to predict thermal stability is the glass transition temperature (Tg). Unfortunately the glass transition in polymer thin films is still not clearly understood. In this work, a simple model is developed for the thickness dependence of Tg of polymer thin and ultrathin films. It is predicted that Tg of polymer thin films can either be reduced or enhanced in comparison with its bulk values, depending on the polymer-substrate and polymer-surface interactions. In addition, the thickness- dependent Tg of polymer thin films can exhibit a minimum as a function of thickness. Experimental data from technologically important ILD films are obtained to support the theoretical model.

Paper Details

Date Published: 11 August 1999
PDF: 8 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360588
Show Author Affiliations
David T. Hsu, Univ. of California/Irvine (United States)
Hyungkun Kim, Univ. of California/Irvine (United States)
Frank G. Shi, Univ. of California/Irvine (United States)
Bin Zhao, Conexant Systems Inc. (United States)
Maureen R. Brongo, Conexant Systems Inc. (United States)
P. Schilling, AlliedSignal Inc. (United States)
Shi-Qing Wang, AlliedSignal Inc. (United States)


Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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