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Proceedings Paper

Novel metallization scheme using nitrogen passivated Ti liner for AlCu-based metallization
Author(s): Sven Schmidbauer; Stefan Spinler; M. U. Lehr; J. Klotzsche; J. Hahn
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Paper Abstract

In many fabs for quarter micron and below technologies a stack consisting of Ti/TiN/AlCu/TiN or Ti/AlCu/TiN is being used for metallization. A new approach for metal stack deposition of 0.25 micrometers and beyond, utilizing hew design rules, has been used for DRAM processes. The novel metal deposition process uses an insitu nitrogen purge directly after deposition of bottom Ti to achieve a passivation of the Ti with a thin nitride before deposition of AlCu. This novel approach has been compared to standard metallization stacks consisting of Ti/AlCu/TiN and Ti/TiN/AlCu/TiN.

Paper Details

Date Published: 11 August 1999
PDF: 11 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360582
Show Author Affiliations
Sven Schmidbauer, Infineon Technologies AG (Germany)
Stefan Spinler, Infineon Technologies AG (Germany)
M. U. Lehr, Infineon Technologies AG (Germany)
J. Klotzsche, Infineon Technologies AG (Germany)
J. Hahn, Infineon Technologies AG (Germany)


Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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