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Proceedings Paper

Enabling and cost-effective TiCl4-based PECVD Ti and CVD TiN processes for gigabit DRAM technology
Author(s): Sri Srinivas; Ming Xi; Brian Metzger; Zvi Lando; Murali K. Narasimhan; Fusen E. Chen
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Paper Abstract

This paper discusses TiCl4 based PECVD Ti and CVD TiN processes that enable a critical contact technology for cost effective gradient DRAMs. The PECVD Ti contact silicidation process and the CVD TiN barrier process together allow for reliable contact metallization with excellent contact resistance and leakage current performance for aspect ratios >12:1. Such capability has allowed a substantial increase in capacitor height alleviating the need for either a change in the capacitor dielectric as well as allowing the continuation of the bitline over capacitor metallization architecture. In addition, the in-situ silicidation capability of the PECVD Ti process allows for the elimination of the contact silicidation anneal step. When used as the top electrode in Ta2O3 based capacitor structures, TiCl4 based CVD TiN provides for reliable metallization with excellent leakage current performance. Preliminary results show that CVD TiN provides the capability for a complete plug fill with no peeling or cracking.

Paper Details

Date Published: 11 August 1999
PDF: 11 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360581
Show Author Affiliations
Sri Srinivas, Applied Materials Inc. (United States)
Ming Xi, Applied Materials Inc. (United States)
Brian Metzger, Applied Materials Inc. (United States)
Zvi Lando, Applied Materials Inc. (United States)
Murali K. Narasimhan, Applied Materials Inc. (United States)
Fusen E. Chen, Applied Materials Inc. (United States)


Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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