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Proceedings Paper

Ultrathin integrated ion metal plasma titanium and metallorganic titanium nitride liners for sub 0.18 um W based metallization schemes for >500 MHz microprocessors
Author(s): Nitin Khurana; Vikram Pavate; Michael Jackson; T. Mandrekar; Z. Fang; Anish Tolia; H. Luo; Jason Li; Rod Mosely; Murali K. Narasimhan; Mei Chang; Fusen E. Chen
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Paper Abstract

This study will specifically address the results of integrating IMP Ti and MOCVD TiN on a high vacuum system. Results of design of experiments used for process characterization and optimizing device parametric such as contact and via resistance will be discussed, in particular with respect to unlanded via schemes. Finally, Cost of Ownership calculations will be presented in comparison to conventional PVD technologies. In summary, the integration of IMP Ti and MOCVD TiN enables the deposition of a highly cost effective, low resistivity, ultra-thin, and low- temperature liners for sub 0.18 micrometers technology node thereby enabling > 500 MHz microprocessor technology.

Paper Details

Date Published: 11 August 1999
PDF: 11 pages
Proc. SPIE 3883, Multilevel Interconnect Technology III, (11 August 1999); doi: 10.1117/12.360579
Show Author Affiliations
Nitin Khurana, Applied Materials (United States)
Vikram Pavate, Applied Materials (United States)
Michael Jackson, Applied Materials (United States)
T. Mandrekar, Applied Materials (United States)
Z. Fang, Applied Materials (United States)
Anish Tolia, Applied Materials (United States)
H. Luo, Applied Materials (United States)
Jason Li, Applied Materials (United States)
Rod Mosely, Applied Materials (United States)
Murali K. Narasimhan, Applied Materials (United States)
Mei Chang, Applied Materials (United States)
Fusen E. Chen, Applied Materials (United States)


Published in SPIE Proceedings Vol. 3883:
Multilevel Interconnect Technology III
Mart Graef; Divyesh N. Patel, Editor(s)

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